bf964s vishay telefunken www.vishay.com rev. 3, 20-jan-99 1 (8) document number 85003 nchannel dual gate mos-fieldeffect tetrode, depletion mode electrostatic sensitive device. observe precautions for handling. applications input- and mixer stages especially vhf tv-tuners. features integrated gate protection diodes high cross modulation performance low noise figure high agc-range low feedback capacitance low input capacitance 1 4 3 2 94 9307 96 12647 bf964s marking: bf964s plastic case (to 50) 1=drain, 2=source, 3=gate 1, 4=gate 2 g 2 g 1 d s 12623 absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test conditions type symbol value unit drain - source voltage v ds 20 v drain current i d 30 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg 55 to +150 c maximum thermal resistance t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit channel ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35 m cu r thcha 450 k/w
bf964s vishay telefunken www.vishay.com rev. 3, 20-jan-99 2 (8) document number 85003 electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test conditions type symbol min typ max unit drain - source breakdown voltage i d = 10 a, v g1s = v g2s = 4 v v (br)ds 20 v gate 1 - source breakdown voltage i g1s = 10 ma, v g2s = v ds = 0 v (br)g1ss 8 14 v gate 2 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 8 14 v gate 1 - source leakage current v g1s = 5 v, v g2s = v ds = 0 i g1ss 50 na gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 50 na drain current v ds = 15 v, v g1s = 0, v g2s = 4 v bf964s i dss 4 18 ma ds g1s g2s BF964SA i dss 4 10.5 ma bf964sb i dss 9.5 18 ma gate 1 - source cut-off voltage v ds = 15 v, v g2s = 4 v, i d = 20 a v g1s(off) 2.5 v gate 2 - source cut-off voltage v ds = 15 v, v g1s = 0, i d = 20 a v g2s(off) 2.0 v electrical ac characteristics v ds = 15 v, i d = 10 ma, v g2s = 4 v, f = 1 mhz , t amb = 25 c, unless otherwise specified parameter test conditions symbol min typ max unit forward transadmittance ? y 21s ? 15 18.5 ms gate 1 input capacitance c issg1 2.5 3.0 pf gate 2 input capacitance v g1s = 0, v g2s = 4 v c issg2 1.2 pf feedback capacitance c rss 25 35 ff output capacitance c oss 1.0 1.3 pf power gain g s = 2 ms, g l = 0.5 ms, f = 200 mhz g ps 25 db agc range v g2s = 4 to 2 v, f = 200 mhz g ps 50 db noise figure g s = 2 ms, g l = 0.5 ms, f = 200 mhz f 1.0 db
bf964s vishay telefunken www.vishay.com rev. 3, 20-jan-99 3 (8) document number 85003 typical characteristics (t amb = 25 c unless otherwise specified) 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 t amb ambient temperature ( c ) 96 12159 p total power dissipation ( mw ) tot figure 1. total power dissipation vs. ambient temperature 0 4 8 12 16 20 24 28 32 36 0246810121416 v ds drain source voltage ( v ) 12762 i drain current ( ma ) d v g1s =2v 1.5v 1v 0v 0.5v 1v 0.5v v g2s =4v figure 2. drain current vs. drain source voltage 0 10 20 30 40 50 60 70 80 90 100 1012345 v g1s gate 1 source voltage ( v ) 12763 i drain current ( ma ) d v g2s =6v 5v 4v 0v 2v 1v 3v v ds = 15v 1v figure 3. drain current vs. gate 1 source voltage 0 10 20 30 40 50 60 70 80 1012345 v g2s gate 2 source voltage ( v ) 12764 i drain current ( ma ) d 0v 2v 1v 3v v ds = 15v 1v v g1s =4v figure 4. drain current vs. gate 2 source voltage 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 3 6 9 12 15 18 21 24 27 30 i d drain current ( ma ) 12765 c gate 1 input capacitance ( pf ) issg1 v ds =15v v g2s =4v f=1mhz figure 5. gate 1 input capacitance vs. drain current 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 2 4 6 8 101214161820 v ds drain source voltage ( v ) 12766 c output capacitance ( pf ) oss v g2s =4v i d =10ma f=1mhz figure 6. output capacitance vs. drain source voltage
bf964s vishay telefunken www.vishay.com rev. 3, 20-jan-99 4 (8) document number 85003 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 3210123456 v g2s gate 2 source voltage ( v ) 12767 c gate 2 input capacitance ( pf ) issg2 v ds =15v v g1s =0 f=1mhz figure 7. gate 2 input capacitance vs. gate 2 source voltage 70 60 50 40 30 20 10 0 10 543210123 v g1s gate 1 source voltage ( v ) 12768 s transducer gain ( db ) 2 21 4v 0v 2v 1v 3v f= 200mhz 0.5v v g2s =2...3v 1v figure 8. transducer gain vs. gate 1 source voltage 0 2 4 6 8 10 12 14 16 18 20 22 24 0 5 10 15 20 25 30 i d drain current ( ma ) 12769 y forward transadmittance ( ms ) 21s v ds =15v f=1mhz v g2s =4v 2v 3v 1v 0.5v 0v figure 9. forward transadmittance vs. drain current 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 101214161820 re (y 11 ) ( ms ) 12770 im ( y ) ( ms ) 11 v ds =15v v g2s =4v f=100...1300mhz f=1300mhz 700mhz 400mhz 1000mhz 100mhz i d =5ma i d =10ma i d =20ma figure 10. short circuit input admittance 0.1 0.0 0.1 0.2 0.3 0 0.1 0.2 0.3 0.4 0.5 re (y 12 ) ( ms ) 12772 im ( y ) ( ms ) 12 v ds =15v v g2s =4v f=100...1300mhz f=1300mhz 700mhz i d =5ma 10ma 20ma 1000mhz figure 11. short circuit reverse transfer admittance 40 35 30 25 20 15 10 5 0 5 8 4 0 4 8 12 16 20 24 re (y 21 ) ( ms ) 12771 im ( y ) ( ms ) 21 v ds =15v v g2s =4v f=100...1300mhz f=100mhz 1300mhz 1000mhz 400mhz 700mhz i d =5ma 10ma 20ma figure 12. short circuit forward transfer admittance
bf964s vishay telefunken www.vishay.com rev. 3, 20-jan-99 5 (8) document number 85003 0 1 2 3 4 5 6 7 8 0 0.5 1.0 1.5 2.0 2.5 re (y 22 ) ( ms ) 12773 im ( y ) ( ms ) 22 v ds =15v v g2s =4v f=100...1300mhz f=1300mhz 1000mhz 400mhz 100mhz i d =5ma 20ma 700mhz i d =10ma figure 13. short circuit output admittance
bf964s vishay telefunken www.vishay.com rev. 3, 20-jan-99 6 (8) document number 85003 v ds = 15 v, i d = 5 to 20 ma, v g2s = 4 v , z 0 = 50 s 11 12 924 j0.2 j0.5 j j2 j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 1300mhz 400 700 1000 100 figure 14. input reflection coefficient s 21 12 926 0 90 180 90 0.8 1.6 150 120 60 30 120 150 60 30 1300mhz 400 700 1000 100 30 i d = 20ma 10ma 5ma figure 15. forward transmission coefficient s 12 12 925 0 90 180 90 0.008 0.016 150 120 60 30 120 150 60 30 1300mhz 400 100 1000 i d = 20ma 10ma 5ma figure 16. reverse transmission coefficient s 22 12 927 j0.2 j0.5 j j2 j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 1300mhz 700 100 figure 17. output reflection coefficient
bf964s vishay telefunken www.vishay.com rev. 3, 20-jan-99 7 (8) document number 85003 dimensions in mm 96 12242
bf964s vishay telefunken www.vishay.com rev. 3, 20-jan-99 8 (8) document number 85003 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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